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| Composite Transistors XN1401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SB709A x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings -60 -50 -7 -100 -200 300 150 -55 to +150 Unit V V V mA mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 5V Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IB = 0 VCE = -10V, IC = -2mA VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 0.5 0.99 - 0.3 80 2.7 - 0.5 V MHz pF min -60 -50 -7 - 0.1 -100 460 typ max Unit V V V A A Ratio between 2 elements +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 500 -60 Ta=25C IB=-300A XN1401 IC -- VCE -60 VCE= - 5V Ta=25C -50 IC -- I B Total power dissipation PT (mW) Collector current IC (mA) -250A -40 -200A -30 Collector current IC (mA) 400 -50 -40 300 -150A -30 200 -20 -100A -20 100 -10 -50A -10 0 0 40 80 120 160 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 0 -100 -200 -300 -400 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE -400 -350 VCE=-5V Ta=25C -200 -240 IC -- VBE -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) VCE=-5V IC/IB=10 25C Ta=75C -25C -3 -1 -0.3 -0.1 -0.03 -0.01 25C Ta=75C Base current IB (A) -300 -250 -200 -150 -100 -50 0 0 -0.4 -0.8 -1.2 -1.6 Collector current IC (mA) -160 -25C -120 -80 -40 -0.003 -0.001 -1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-10V 160 VCB=-10V Ta=25C fT -- I E 8 Cob -- VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 140 120 100 80 60 40 20 7 6 5 4 3 2 1 0 -1 400 Ta=75C 300 25C -25C 200 100 0 -1 -3 -10 -30 -100 -300 -1000 0 0.1 0.3 1 3 10 30 100 -2 -3 -5 -10 -20 -30 -50 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Composite Transistors NF -- IE 6 VCB=-5V f=1kHz Rg=2k Ta=25C 20 18 16 VCB=-5V Rg=50k Ta=25C XN1401 NF -- IE 300 200 hfe 100 h Parameter -- IE 5 Noise figure NF (dB) Noise figure NF (dB) 12 10 8 6 4 2 Parameter h 4 14 50 30 20 10 5 3 2 1 0.1 hre 0.2 0.3 0.5 (x10-4) 1 2 3 VCE=-5V f=270Hz Ta=25C 5 10 hoe (S) f=100Hz 3 1kHz 10kHz 2 hie (k) 1 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.2 0.3 0.5 1 2 3 5 10 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) h Parameter -- VCE 300 200 hfe 100 IE=2mA f=270Hz Ta=25C Parameter h 50 30 20 hoe (S) 10 5 3 2 1 -1 hre (x10-4) hie (k) -2 -3 -5 -10 -20 -30 -50 -100 Collector to emitter voltage VCE (V) 3 |
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